KAUST team achieves remarkable flexibility with silicon-based electronic devices

Summary

A KAUST team led by Prof. Hussain published a paper in ACS Nano detailing their use of industry-compatible processes to create a flexible transistor with a bending radius of 0.5 mm. The transistor is constructed from a monocrystalline silicon-based substrate and uses a process that does not degrade device performance. The team's approach uses a network of trenches/holes and a back-etch process to create flexible electronics without compromising cost, yield, performance, and efficiency. Why it matters: This research paves the way for high-performance, portable electronics using silicon, a material already widely used in the electronics industry.